Narrow band gap InGaSb, InAlAsSb alloys for electronic devices
نویسندگان
چکیده
Solid source molecular beam epitaxy has been used to grow random alloy quaternary InAlAsSb and ternary InGaSb alloys with a 6.2 Å lattice constant for use in electronic devices such as p-n junctions and heterojunction bipolar transistors HBTs . Several p-n hetrojunctions composed of p-type InGaSb and one of several different n-type InAlAsSb alloys have been fabricated and show good rectification with ideality factors near one. In addition, several of these alloys have been used to make an n-p-n HBT that has demonstrated a dc current gain of 25. DOI: 10.1116/1.2201448
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